ABB 5SHY4045L0001 3BHB018162 Inverter Board IGCT Module
Description
| Manufacture | ABB |
| Model | 5SHY4045L0001 |
| Ordering information | 3BHB018162 |
| Catalog | VFD Spares |
| Description | ABB 5SHY4045L0001 3BHB018162 Inverter Board IGCT Module |
| Origin | United States (US) |
| HS Code | 85389091 |
| Dimension | 16cm*16cm*12cm |
| Weight | 0.8kg |
Details
5SHY4045L0001 3BHB018162R0001 is an integrated gate-commutated thyristor (IGCT) product of ABB, belonging to the 5SHY series.
IGCT is a new type of electronic device that appeared in the late 1990s.
It combines the advantages of IGBT (insulated gate bipolar transistor) and GTO (gate turn-off thyristor), and has the characteristics of fast switching speed, large capacity, and large required driving power.
Specifically, the capacity of 5SHY4045L0001 3BHB018162R0001 is equivalent to that of GTO, but its switching speed is 10 times faster than that of GTO, which means that it can complete the switching action in a shorter time and thus improve the power conversion efficiency.
In addition, compared with GTO, IGCT can save the huge and complicated snubber circuit, which helps to simplify the system design and reduce costs.
However, it should be noted that although IGCT has many advantages, the driving power required is still large.
This may increase the energy consumption and complexity of the system. In addition, although IGCT is trying to replace GTO in high-power applications, it is still facing fierce competition from other new devices (such as IGBT)
5SHY4045L00013BHB018162R0001 Integrated gate commutated transistors|GCT (Intergrated Gate commutated transistors) is a new power semiconductor device used in giant power electronic equipment that came out in 1996.
IGCT is a new high-power semiconductor switch device based on GTO structure, using integrated gate structure for gate hard drive, using buffer middle layer structure and anode transparent emitter technology, with the on-state characteristics of the thyristor and the switching characteristics of the transistor.
5SHY4045L000) 3BHBO18162R0001 uses a buffer structure and shallow emitter technology, which reduces dynamic loss by about 50%.
In addition, this type of equipment also integrates a freewheeling diode with good dynamic characteristics on a chip, and then realizes the organic combination of the low on-state voltage drop, high blocking voltage and stable switching characteristics of the thyristor in a unique way.
